EDO$500066$ - traduction vers espagnol
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EDO$500066$ - traduction vers espagnol

ES UN ESTADO EN EL PAÍS AFRICANO DE NIGERIA
Edo (Estado); Estado Edo; Estado de Edo

EDO      
Output de datos extendidos, tipo de memoria ocasional que permite la recolección de datos sucesivamente sin interrupción
Fast Page Mode         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
Estado de página rápida, tipo de RAM dinámico que permite el acceso rápido a los datos en una linea presente y abierta
Dynamic RAM         
  • [[MoSys]] MDRAM MD908
  • accessdate=2022-03-09}}</ref> (lower edge, right of middle).
  • 1 Mbit high speed [[CMOS]] pseudo static RAM, made by [[Toshiba]]
  • NMOS]] DRAM cell. It was patented in 1968.
  • die]] of a Samsung DDR-SDRAM 64MBit package
  • Inside a Samsung GDDR3 256&nbsp;MBit package
  • A 512 MBit [[Qimonda]] GDDR3 SDRAM package
  • Writing to a DRAM cell
RANDOM-ACCESS MEMORY THAT STORES EACH BIT OF DATA IN A SEPARATE CAPACITOR WITHIN AN INTEGRATED CIRCUIT
DRAM (memory); Pseudostatic RAM; PSRAM; Pseudostatic Random Access Memory; Window RAM; Dynamic RAM; EDO RAM; Fast Page Mode DRAM; FPM RAM; FPM DRAM; Fast Page Mode RAM; BEDO (RAM); MDRAM; Row Access Strobe; Column Access Strobe; CAS access time; Precharge interval; Row address select; Column address select; 1T DRAM; DDRAM; D-RAM; EDO DRAM; Fast page mode; Page mode memory; Extended Data Out RAM; BEDO RAM; Burst EDO; Multibank DRAM; Intel 1102; Burst EDO DRAM; Memory Timing; Dynamic Random Access Memory; FPRAM; Dynamic random access memory; Extended data out DRAM; Extended Data Out DRAM; Dynamic Random access memory; Static column RAM; Memory row; DRAM row; Row activation; WRAM (memory); 1T1C; 1t1c; 3T1C; Page mode RAM; Page mode DRAM; DRAM; D. R. A. M.; D.R.A.M.; DRAM memory; Asynchronous DRAM; EDO memory; Fast page mode DRAM; Window DRAM; Video DRAM; Nibble mode; EDO SGRAM
See: DRAM

Définition

EDO
Extended Data Out [Additional explanations: ram] (Reference: RAM, DRAM, IC)

Wikipédia

Edo (estado)

Edo es un estado interior de Nigeria. Su capital es Ciudad de Benín. Fue formado en 1991 tras la división de Bendel en dos estados: Edo y Delta. Las lenguas nativas habladas en el estado incluyen el edo, el esan, el ora, etc.